AMD » Topics » Lithography Documentation

This excerpt taken from the AMD 10-K filed Mar 1, 2007.

Lithography Documentation

- Mask fabrication specifications

 

Third Amendment and Restatement of “S” Process Development Agreement between AMD and IBM
IBM - AMD Confidential    Page 86 of 90


EXECUTION VERSION

 

- Mask data processing sequence including OPC/PPC

- Method of process characterization to extract OPC/PPC data correction paramaters for the correction software

- Mask qualification procedure

- Specific mask making tool selection and its derived mask fabrication specification if exists

Bump Documentation

Process routing

Process of Record (POR)

- Process change history (after T2 process freeze)

Process assumptions, if available

Process engineering specifications

Unit process descriptions and characterization (rate, uniformity, selectivity, particle, etc.)

Process recipes for critical unit processes

Process window definition and define process limitations

Specification Sheets for critical dimensions, overlay

Cp/Cpk for critical measurements

List of critical tools including QC tools

Critical Equipment specifications

- Critical maintenance procedures

TEM Cross Sections (both center and edge)

Cross section data of bump geometries

Physical characterization results (e.g., SEM, EDX, SIMS, etc.)

Reliability measurement methodology and applicable results including fatigue and electromigration

Tool control/monitor data for critical tools

Material Specifications for critical materials

- plating baths, sputtering targets and suppliers

- Contamination effects

Defect Catalog

Bill Of Materials For bumps

Technology Qualification Vehicle Documentation

Technology Design Manual, if available

 

Third Amendment and Restatement of “S” Process Development Agreement between AMD and IBM
IBM - AMD Confidential    Page 87 of 90


EXECUTION VERSION

 

In-Line Specification document, if available

Reliability Documentation

Qualification plan for T0, T1 and T2

Early reliability stress results

Physical failure analysis data

This excerpt taken from the AMD 10-Q filed Nov 3, 2005.

Lithography Documentation

 

    Mask fabrication specifications

 

    Mask data processing sequence including OPC/PPC

 

    Method of process characterization to extract OPC/PPC data correction paramaters for the correction software

 

    Mask qualification procedure

 

    Specific mask making tool selection and its derived mask fabrication specification if exists

 

Bump Documentation

 

Process routing

 

Process of Record (POR)

 

    Process change history (after T2 process freeze)

 

Process assumptions, if available

 

Process engineering specifications

 

Unit process descriptions and characterization (rate, uniformity, selectivity, particle, etc.)

 

Process recipes for critical unit processes

 

Process window definition and define process limitations

 

Specification Sheets for critical dimensions, overlay

 

Cp/Cpk for critical measurements

 

List of critical tools including QC tools

 

Critical Equipment specifications

 

    Critical maintenance procedures

 

TEM Cross Sections (both center and edge)

 

Cross section data of bump geometries

 

Physical characterization results (e.g., SEM, EDX, SIMS, etc.)

 

Second Amendment and Restatement of “S” Process Development Agreement between AMD and IBM
IBM - AMD Confidential    Page 84 of 87


Reliability measurement methodology and applicable results including fatigue and electromigration

 

Tool control/monitor data for critical tools

 

Material Specifications for critical materials

 

    plating baths, sputtering targets and suppliers

 

    Contamination effects

 

Defect Catalog

 

Bill Of Materials For bumps

 

Technology Qualification Vehicle Documentation

 

Technology Design Manual, if available

 

In-Line Specification document, if available

 

Reliability Documentation

 

Qualification plan for T0, T1 and T2

 

Early reliability stress results

 

Physical failure analysis data

 

Additional requests for Documentation shall be by the mutual agreement of the Project Leaders, which agreement shall not be unreasonably withheld. If, however, the Project Leaders do not agree, such Party may escalate the lack of agreement among the Project Leaders to the Management Committee for resolution. In addition, such Party may access information available during the Process Development Projects and document such information for the purpose of transferring such information to its own manufacturing facilities. All such documentation shall be made available to all three (3) Parties.

 

Second Amendment and Restatement of “S” Process Development Agreement between AMD and IBM
IBM - AMD Confidential    Page 85 of 87


 

EXHIBIT K

 

EXCERPTS ON THIS PAGE:

10-K
Mar 1, 2007
10-Q
Nov 3, 2005
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